APT40SM120B
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- Mfr.Part #
- APT40SM120B
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 41A TO247
- Stock
- 15,020
- In Stock ：
- 15,020
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 273W Tc
- Mount :
- Through Hole
- Power Dissipation :
- 273W
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 20A, 20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA (Typ)
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 1200V
- Published :
- 1997
- Height :
- 25.96mm
- Manufacturer Package Identifier :
- TO-247 (B)
- Factory Lead Time :
- 22 Weeks
- Max Junction Temperature (Tj) :
- 175°C
- Drain to Source Breakdown Voltage :
- 1.2kV
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Vgs (Max) :
- +25V, -10V
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2560pF @ 1000V
- Packaging :
- Bulk
- Threshold Voltage :
- 1.7V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 10 ns
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Turn-Off Delay Time :
- 32 ns
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 41A
- Datasheets
- APT40SM120B
N-Channel Bulk 100m Ω @ 20A, 20V +25V, -10V 2560pF @ 1000V 130nC @ 20V 1200V TO-247-3
APT40SM120B Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 2560pF @ 1000V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 41A.When VGS=1.2kV, and ID flows to VDS at 1.2kVVDS, the drain-source breakdown voltage is 1.2kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 32 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.7V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200V in order to operate.Using drive voltage (20V), this device helps reduce its power consumption.
APT40SM120B Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 32 ns
a threshold voltage of 1.7V
a 1200V drain to source voltage (Vdss)
APT40SM120B Applications
There are a lot of Microsemi Corporation
APT40SM120B applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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