APT40M35JVFR
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- Mfr.Part #
- APT40M35JVFR
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 93A ISOTOP
- Stock
- 40,760
- In Stock ：
- 40,760
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 30ns
- Published :
- 1997
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 46.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Mount :
- Chassis Mount, Screw
- Power Dissipation-Max :
- 700W Tc
- Factory Lead Time :
- 22 Weeks
- Power Dissipation :
- 700W
- Terminal Position :
- UPPER
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 372A
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 400V
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 20 ns
- Number of Terminations :
- 4
- Terminal Form :
- UNSPECIFIED
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 1065nC @ 10V
- Drain-source On Resistance-Max :
- 0.035Ohm
- Series :
- POWER MOS V®
- Continuous Drain Current (ID) :
- 93A
- RoHS Status :
- RoHS Compliant
- Package / Case :
- SOT-227-4, miniBLOC
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 14 ns
- Current Rating :
- 93A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 20160pF @ 25V
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 75 ns
- Pin Count :
- 4
- Mounting Type :
- Chassis Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 93A Tc
- Datasheets
- APT40M35JVFR
N-Channel Tube 35m Ω @ 46.5A, 10V ±30V 20160pF @ 25V 1065nC @ 10V SOT-227-4, miniBLOC
APT40M35JVFR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3600 mJ.The maximum input capacitance of this device is 20160pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 93A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 372A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT40M35JVFR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 93A
the turn-off delay time is 75 ns
based on its rated peak drain current 372A.
APT40M35JVFR Applications
There are a lot of Microsemi Corporation
APT40M35JVFR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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