APT28F60S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Terminal Position :

Single

Power Dissipation :

520W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Vgs (Max) :

±30V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Number of Pins :

3

Number of Terminations :

2

Published :

1997

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

520W Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

780 mJ

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

30A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

5575pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

245

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Series :

POWER MOS 8™

Mount :

Surface Mount

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

220m Ω @ 14A, 10V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.22Ohm