APT26F120B2
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- Mfr.Part #
- APT26F120B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 27A T-MAX
- Stock
- 40,500
- In Stock ：
- 40,500
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 9670pF @ 25V
- Factory Lead Time :
- 22 Weeks
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 1.2kV
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Number of Pins :
- 3
- Terminal Position :
- Single
- Voltage - Rated DC :
- 1.2kV
- Current Rating :
- 26A
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Drain to Source Voltage (Vdss) :
- 1200V
- Terminal Finish :
- Pure Matte Tin (Sn)
- Power Dissipation-Max :
- 1135W Tc
- Package / Case :
- TO-247-3 Variant
- Turn On Delay Time :
- 50 ns
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 27A
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Length :
- 21.46mm
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 14A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 48 ns
- Height :
- 5.31mm
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 170 ns
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Rise Time :
- 31ns
- Number of Terminations :
- 3
- Width :
- 16.26mm
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 1997
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.58Ohm
- Datasheets
- APT26F120B2
N-Channel Tube 650m Ω @ 14A, 10V ±30V 9670pF @ 25V 300nC @ 10V 1200V TO-247-3 Variant
APT26F120B2 Overview
A device's maximum input capacitance is 9670pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 27A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.2kV, and this device has a drain-to-source breakdown voltage of 1.2kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 170 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 50 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT26F120B2 Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 170 ns
a 1200V drain to source voltage (Vdss)
APT26F120B2 Applications
There are a lot of Microsemi Corporation
APT26F120B2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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