APT24M120B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1200V

Number of Elements :

1

Fall Time (Typ) :

42 ns

Number of Pins :

3

Vgs (Max) :

±30V

Power Dissipation :

1.04kW

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Power Dissipation-Max :

1040W Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Current Rating :

24A

Gate to Source Voltage (Vgs) :

30V

Series :

POWER MOS 8™

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

90A

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

8370pF @ 25V

Packaging :

Tube

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Terminal Position :

Single

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Rise Time :

27ns

Lead Free :

Lead Free

Package / Case :

TO-247-3 Variant

Factory Lead Time :

22 Weeks

Voltage - Rated DC :

1.2kV

Rds On (Max) @ Id, Vgs :

630m Ω @ 12A, 10V

Continuous Drain Current (ID) :

24A

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Turn On Delay Time :

45 ns

Pin Count :

3

Turn-Off Delay Time :

145 ns

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)