APT22F80B
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- Mfr.Part #
- APT22F80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 23A TO247
- Stock
- 16,166
- In Stock ：
- 16,166
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- Height :
- 5.31mm
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625W
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 975 mJ
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Weight :
- 38.000013g
- Power Dissipation-Max :
- 625W Tc
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Voltage - Rated DC :
- 800V
- Mount :
- Through Hole
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- JESD-609 Code :
- e1
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Published :
- 1997
- Fall Time (Typ) :
- 33 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 33 Weeks
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 38ns
- Current Rating :
- 22A
- Width :
- 16.26mm
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 115 ns
- Length :
- 21.46mm
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Continuous Drain Current (ID) :
- 23A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- TIN SILVER COPPER
- Drain-source On Resistance-Max :
- 0.43Ohm
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 12A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 4595pF @ 25V
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 26 ns
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 85A
- Datasheets
- APT22F80B
N-Channel Tube 500m Ω @ 12A, 10V ±30V 4595pF @ 25V 150nC @ 10V TO-247-3
APT22F80B Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 975 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4595pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 115 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 85A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 26 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT22F80B Features
the avalanche energy rating (Eas) is 975 mJ
a continuous drain current (ID) of 23A
the turn-off delay time is 115 ns
based on its rated peak drain current 85A.
APT22F80B Applications
There are a lot of Microsemi Corporation
APT22F80B applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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