APT20N60BC3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

20.7A Tc

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

190m Ω @ 13.1A, 10V

Continuous Drain Current (ID) :

20.7A

Pulsed Drain Current-Max (IDM) :

62A

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

20.7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.19Ohm

Package / Case :

TO-247-3

Packaging :

Tube

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2440pF @ 25V

JEDEC-95 Code :

TO-247AD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Mount :

Through Hole

Transistor Application :

SWITCHING

Pin Count :

3

Series :

CoolMOS™

Voltage - Rated DC :

600V

Lead Free :

Lead Free

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

690 mJ

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Number of Terminations :

3

Power Dissipation-Max :

208W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2004

Additional Feature :

AVALANCHE ENERGY RATED