APT20M38BVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Turn-Off Delay Time :

48 ns

Turn On Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

Vgs (Max) :

±30V

Number of Terminations :

3

Power Dissipation :

370W

Continuous Drain Current (ID) :

67A

Lead Free :

Lead Free

Fall Time (Typ) :

10 ns

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

High Voltage

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Series :

POWER MOS V®

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.038Ohm

FET Type :

N-Channel

Factory Lead Time :

31 Weeks

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Voltage - Rated DC :

200V

Packaging :

Tube

Mount :

Through Hole

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

38m Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6120pF @ 25V

Power Dissipation-Max :

370W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Radiation Hardening :

No

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

21ns

Published :

1997

Pulsed Drain Current-Max (IDM) :

268A

Operating Temperature :

-55°C~150°C TJ

Current Rating :

67A

Drive Voltage (Max Rds On,Min Rds On) :

10V