APT20M22JVRU2
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- Mfr.Part #
- APT20M22JVRU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 97A SOT227
- Stock
- 14,533
- In Stock ：
- 14,533
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Published :
- 2006
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 290nC @ 10V
- Turn On Delay Time :
- 16 ns
- Rise Time :
- 25ns
- Transistor Application :
- SWITCHING
- Terminal Form :
- UNSPECIFIED
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.022Ohm
- Package / Case :
- SOT-227-4, miniBLOC
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 36 Weeks
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 48.5A, 10V
- Turn-Off Delay Time :
- 48 ns
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Pulsed Drain Current-Max (IDM) :
- 388A
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 8 ns
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 97A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Chassis Mount
- Mount :
- Chassis Mount, Screw
- Current - Continuous Drain (Id) @ 25°C :
- 97A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 8500pF @ 25V
- Terminal Position :
- UPPER
- Drain to Source Voltage (Vdss) :
- 200V
- Packaging :
- Bulk
- Case Connection :
- Isolated
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 450W Tc
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Terminations :
- 4
- Power Dissipation :
- 450W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- DS Breakdown Voltage-Min :
- 200V
- Transistor Element Material :
- SILICON
- Datasheets
- APT20M22JVRU2
N-Channel Bulk 22m Ω @ 48.5A, 10V ±30V 8500pF @ 25V 290nC @ 10V 200V SOT-227-4, miniBLOC
APT20M22JVRU2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8500pF @ 25V.This device conducts a continuous drain current (ID) of 97A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 388A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT20M22JVRU2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 97A
the turn-off delay time is 48 ns
based on its rated peak drain current 388A.
a 200V drain to source voltage (Vdss)
APT20M22JVRU2 Applications
There are a lot of Microsemi Corporation
APT20M22JVRU2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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