APT20M11JVR

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

700A

Terminal Form :

UNSPECIFIED

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

175A Tc

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

4

Series :

POWER MOS V®

Pbfree Code :

yes

ECCN Code :

EAR99

Continuous Drain Current (ID) :

175A

Additional Feature :

High Voltage

Lead Free :

Lead Free

Length :

38.2mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Package / Case :

SOT-227-4, miniBLOC

Case Connection :

Isolated

Radiation Hardening :

No

Number of Elements :

1

Turn-Off Delay Time :

75 ns

Mount :

Chassis Mount, Screw

Power Dissipation :

700W

Input Capacitance (Ciss) (Max) @ Vds :

21600pF @ 25V

Voltage - Rated DC :

200V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Current Rating :

175A

Pin Count :

4

Vgs(th) (Max) @ Id :

4V @ 5mA

Rds On (Max) @ Id, Vgs :

11m Ω @ 500mA, 10V

Rise Time :

40ns

Terminal Position :

UPPER

Packaging :

Tube

Drain to Source Breakdown Voltage :

200V

Published :

1997

Element Configuration :

Single

Turn On Delay Time :

20 ns

Power Dissipation-Max :

700W Tc

Transistor Element Material :

SILICON

Number of Terminations :

4

Number of Channels :

1

Width :

25.4mm

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Height :

9.6mm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

19 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

30.000004g

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

3600 mJ