APL502B2G
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- Mfr.Part #
- APL502B2G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A T-MAX
- Stock
- 24,666
- In Stock ：
- 24,666
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 27ns
- Lead Free :
- Lead Free
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 13 ns
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Drain-source On Resistance-Max :
- 0.09Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 58A
- Length :
- 21.46mm
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Height :
- 5.31mm
- Width :
- 16.26mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 56 ns
- Voltage - Rated DC :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Published :
- 1997
- Current Rating :
- 58A
- Fall Time (Typ) :
- 16 ns
- Contact Plating :
- Gold, Tin
- Packaging :
- Tube
- Package / Case :
- TO-247-3 Variant
- Power Dissipation-Max :
- 730W Tc
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 29A, 12V
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation :
- 730W
- Datasheets
- APL502B2G
N-Channel Tube 90m Ω @ 29A, 12V ±30V 9000pF @ 25V TO-247-3 Variant
APL502B2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (15V).
APL502B2G Features
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns
APL502B2G Applications
There are a lot of Microsemi Corporation
APL502B2G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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