AOT430

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

75V

Mounting Type :

Through Hole

Power Dissipation :

268W

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

11.5mOhm @ 30A, 10V

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Power Dissipation-Max :

268W Tc

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Max Operating Temperature :

150°C

Supplier Device Package :

TO-220

Min Operating Temperature :

-55°C

Rds On Max :

11.5 mΩ

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Input Capacitance :

4.7nF

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 30V

Continuous Drain Current (ID) :

80A