AO4710

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation :

3.1W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

FET Feature :

Schottky Diode (Body)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Position :

Dual

Published :

2008

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2376pF @ 15V

Number of Pins :

8

Series :

SRFET™

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 12.7A, 10V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12.7A Ta

Terminal Form :

Gull wing

Number of Terminations :

8

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±12V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

12.7A