AFT27S006NT1

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Mfr.Part #
AFT27S006NT1
Manufacturer
NXP Semiconductors
Package / Case
PLD-1.5W
Datasheet
Download
Description
RF MOSFET LDMOS 28V PLD1.5W
Stock
1,741
In Stock :
1,741

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Current - Test :
70mA
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
10 Weeks
Voltage - Test :
28V
Terminal Position :
Dual
Number of Terminations :
2
RoHS Status :
ROHS3 Compliant
Terminal Form :
Flat
Operating Temperature (Min) :
-40°C
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PDFM-F2
Power - Output :
28.8dBm
Voltage - Rated :
65V
Gain :
22dB
Operating Temperature (Max) :
150°C
Packaging :
Tape and Reel (TR)
Transistor Type :
LDMOS
Frequency :
2.17GHz
Configuration :
Single
Package / Case :
PLD-1.5W
Number of Elements :
1
Published :
2013
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
JESD-609 Code :
e3
Power Dissipation Ambient-Max :
1.5W
Time@Peak Reflow Temperature-Max (s) :
40
Surface Mount :
yes
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
260
Datasheets
AFT27S006NT1
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors AFT27S006NT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Gain:22dB, Package / Case:PLD-1.5W, AFT27S006NT1 pinout, AFT27S006NT1 datasheet PDF, AFT27S006NT1 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors AFT27S006NT1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors AFT27S006NT1


AFT27S006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

AFT27S006NT1 Description

 

AFT27S006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor AFT27S006NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S006NT1 has the common source configuration.

 

 

AFT27S006NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT27S006NT1 Applications

 

ISM applications

DC large signal applications


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