5HN01SS-TL-E

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Mfr.Part #
5HN01SS-TL-E
Manufacturer
onsemi
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
MOSFET N-CH 50V 100MA SSFP3
Stock
7,751
In Stock :
7,751

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Resistance :
5.8Ohm
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
10 ns
Drain Current-Max (Abs) (ID) :
0.1A
Power Dissipation-Max (Abs) :
0.15W
Published :
2006
Power Dissipation Ambient-Max :
0.15W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Dual
Max Operating Temperature :
150°C
Turn-Off Delay Time :
105 ns
JESD-609 Code :
e6
Min Operating Temperature :
-55°C
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
50V
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
75 ns
Packaging :
Tape and Reel (TR)
Package / Case :
3-SMD, Flat Lead
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Continuous Drain Current (ID) :
100mA
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Terminations :
3
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Rise Time :
11ns
Datasheets
5HN01SS-TL-E
Introducing Transistors - FETs, MOSFETs - Single onsemi 5HN01SS-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-SMD, Flat Lead, Number of Pins:3, Number of Terminations:3, 5HN01SS-TL-E pinout, 5HN01SS-TL-E datasheet PDF, 5HN01SS-TL-E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 5HN01SS-TL-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 5HN01SS-TL-E


Tape & Reel (TR) 50V 3-SMD, Flat Lead

5HN01SS-TL-E Overview


This device's continuous drain current (ID) is 100mA, which represents the maximum continuous current it can conduct.In this device, the drain current is 0.1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 105 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5.8Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 50V drain to source voltage (Vdss).

5HN01SS-TL-E Features


a continuous drain current (ID) of 100mA
the turn-off delay time is 105 ns
single MOSFETs transistor is 5.8Ohm
a 50V drain to source voltage (Vdss)


5HN01SS-TL-E Applications


There are a lot of ON Semiconductor
5HN01SS-TL-E applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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