3SK264-5-TG-E
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- Mfr.Part #
- 3SK264-5-TG-E
- Manufacturer
- onsemi
- Package / Case
- TO-253-4, TO-253AA
- Datasheet
- Download
- Description
- 3SK264 - N-CHANNNEL DUAL GATE MO
- Stock
- 1,775
- In Stock ：
- 1,775
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Package / Case :
- TO-253-4, TO-253AA
- Power Dissipation :
- 200mW
- Drain to Source Voltage (Vdss) :
- 15V
- Published :
- 2006
- Current - Test :
- 10mA
- Max Power Dissipation :
- 200mW
- Continuous Drain Current (ID) :
- 30mA
- Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Transistor Type :
- N-Channel Dual Gate
- Drain Current-Max (Abs) (ID) :
- 0.03A
- Min Operating Temperature :
- -55°C
- Current Rating :
- 30mA
- Element Configuration :
- Dual
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Gain :
- 23dB
- Max Operating Temperature :
- 125°C
- Noise Figure :
- 2.2dB
- Surface Mount :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- JESD-609 Code :
- e6
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Voltage - Test :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- 3SK264-5-TG-E
3SK264-5-TG-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at
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