3N163
- Mfr.Part #
- 3N163
- Manufacturer
- Vishay
- Package / Case
- TO-206AF, TO-72-4 Metal Can
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 50MA TO72
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Width :
- 5.84mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 0.05A
- Drain to Source Breakdown Voltage :
- -40V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 25 ns
- Number of Channels :
- 1
- Length :
- 5.84mm
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 10µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 50mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.5pF @ 15V
- Power Dissipation :
- 375mW
- Rds On (Max) @ Id, Vgs :
- 250 Ω @ 100μA, 20V
- Pbfree Code :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 50mA Ta
- Height :
- 5.33mm
- JESD-609 Code :
- e0
- Rise Time :
- 13ns
- Packaging :
- Tube
- Turn On Delay Time :
- 5 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 375mW Ta
- Published :
- 2005
- Pin Count :
- 8
- Package / Case :
- TO-206AF, TO-72-4 Metal Can
- Mount :
- Through Hole
- Number of Pins :
- 4
- Mounting Type :
- Through Hole
- FET Type :
- P-Channel
- Radiation Hardening :
- No
- Datasheets
- 3N163
P-Channel Tube 250 Ω @ 100μA, 20V ±30V 3.5pF @ 15V 40V TO-206AF, TO-72-4 Metal Can
3N163 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3.5pF @ 15V.This device conducts a continuous drain current (ID) of 50mA, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.05A.When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).
3N163 Features
a continuous drain current (ID) of 50mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 25 ns
a 40V drain to source voltage (Vdss)
3N163 Applications
There are a lot of Vishay Siliconix
3N163 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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