2SK3666-2-TB-E

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

Length :

2.9mm

Number of Elements :

1

Element Configuration :

Single

Surface Mount :

yes

Published :

2005

Drain to Source Resistance :

200Ohm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Max Operating Temperature :

150°C

Max Power Dissipation :

200mW

JESD-609 Code :

e6

Min Operating Temperature :

-55°C

Transistor Application :

AMPLIFIER

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

-30V

Terminal Position :

Dual

Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Width :

1.5mm

Drain to Source Breakdown Voltage :

30V

Drain Current-Max (Abs) (ID) :

0.01A

Pbfree Code :

yes

Continuous Drain Current (ID) :

10mA

Height :

1.1mm

Input Capacitance :

4pF

ECCN Code :

EAR99

FET Technology :

JUNCTION

Operating Mode :

Depletion Mode

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Pins :

3