2SK3403(Q)

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Mfr.Part #
2SK3403(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 450V 13A TO220FL
Stock
7,450
In Stock :
7,450

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Fall Time (Typ) :
10 ns
Vgs(th) (Max) @ Id :
5V @ 1mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
450V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Power Dissipation :
100W
Vgs (Max) :
±30V
Published :
2007
FET Type :
N-Channel
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Power Dissipation-Max :
100W Tc
Lead Free :
Lead Free
Continuous Drain Current (ID) :
13A
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Rds On (Max) @ Id, Vgs :
400m Ω @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Number of Pins :
3
Package / Case :
TO-220-3, Short Tab
RoHS Status :
RoHS Compliant
Packaging :
Bulk
Rise Time :
28ns
Datasheets
2SK3403(Q)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3403(Q) from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Short Tab, 2SK3403(Q) pinout, 2SK3403(Q) datasheet PDF, 2SK3403(Q) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SK3403(Q) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SK3403(Q)


N-Channel Bulk 400m Ω @ 6A, 10V ±30V 1600pF @ 25V 34nC @ 10V TO-220-3, Short Tab

2SK3403(Q) Overview


A device's maximum input capacitance is 1600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=450V, and this device has a drain-to-source breakdown voltage of 450V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

2SK3403(Q) Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 450V voltage


2SK3403(Q) Applications


There are a lot of Toshiba Semiconductor and Storage
2SK3403(Q) applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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