2SK3357-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

300A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.29.00.95

Pbfree Code :

yes

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.0088Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Surface Mount :

No

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

150W

Drain Current-Max (Abs) (ID) :

75A

Pin Count :

3

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Number of Terminals :

3

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

562 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C