2SK3229-E
- Mfr.Part #
- 2SK3229-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 4,021
- In Stock :
- 4,021
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20 V
- Lead Free :
- Lead Free
- Rise Time :
- 280 ns
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 35 W
- Continuous Drain Current Id :
- 60
- Reach Compliance Code :
- Compliant
- Max Operating Temperature :
- 150 °C
- Subcategory :
- FET General Purpose Power
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- RoHS :
- Compliant
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 80 V
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 60 A
- Pulsed Drain Current-Max (IDM) :
- 240 A
- Pbfree Code :
- yes
- Min Operating Temperature :
- -55 °C
- Manufacturer :
- Renesas Electronics Corporation
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.012 Ω
- Terminal Form :
- THROUGH-HOLE
- Turn-On Delay Time :
- 80 ns
- Package :
- Bulk
- Polarity/Channel Type :
- N-Channel
- Series :
- *
- Drain to Source Voltage (Vdss) :
- 80 V
- Drain Current-Max (Abs) (ID) :
- 60 A
- Factory Lead Time :
- 1 Week
- Channel Type :
- N
- Turn-Off Delay Time :
- 780 ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Terminal Finish :
- TIN COPPER
- Datasheets
- 2SK3229-E

80 V
2SK3229-E Overview
This device has a continuous drain current (ID) of [60 A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 60 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 780 ns.A maximum pulsed drain current of 240 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80 V.In order to operate this transistor, a voltage of 80 V is needed from the drain to the source (Vdss).
2SK3229-E Features
a continuous drain current (ID) of 60 A
the turn-off delay time is 780 ns
based on its rated peak drain current 240 A.
a 80 V drain to source voltage (Vdss)
2SK3229-E Applications
There are a lot of Renesas
2SK3229-E applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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