2SK2225-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A Ta

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1500V

Drain Current-Max (Abs) (ID) :

2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

7A

Pin Count :

3

Published :

2005

JESD-30 Code :

R-PSFM-T3

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

50W Tc

Terminal Position :

Single

Drain to Source Breakdown Voltage :

1.5kV

Continuous Drain Current (ID) :

2A

JESD-609 Code :

e2

Surface Mount :

No

Operating Temperature :

150°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Channels :

1

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Height :

25.5mm

Package / Case :

TO-3PFM, SC-93-3

Input Capacitance (Ciss) (Max) @ Vds :

984.7pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Element Material :

SILICON

Packaging :

Tube

Turn On Delay Time :

17 ns

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

15V

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

12 Ω @ 1A, 15V

Power Dissipation :

50W

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

150 ns

Number of Terminations :

3

Terminal Finish :

Tin/Copper (Sn/Cu)