2SJ529L06-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bulk

Power Dissipation (Max) :

20W (Tc)

FET Feature :

-

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

160mOhm @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Operating Temperature :

150°C

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 10 V

Series :

-

Product Status :

Obsolete

Supplier Device Package :

DPAK(L)-(2)

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

Drain to Source Voltage (Vdss) :

60 V