2SC4617EBTLQ
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- Mfr.Part #
- 2SC4617EBTLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3F
- Stock
- 80,525
- In Stock ：
- 80,525
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 120
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 180MHz
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 400mV
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Published :
- 2009
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Number of Elements :
- 1
- Base Part Number :
- 2SC4617
- Continuous Collector Current :
- 150mA
- Gain Bandwidth Product :
- 180MHz
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Max Collector Current :
- 150mA
- Package / Case :
- SC-89, SOT-490
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Max Power Dissipation :
- 150mW
- Datasheets
- 2SC4617EBTLQ
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SC4617EBTLQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of 150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SC4617EBTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLQ Applications
There are a lot of ROHM Semiconductor
2SC4617EBTLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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