2SA1797T100P
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- Mfr.Part #
- 2SA1797T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A MPT3
- Stock
- 80,519
- In Stock ：
- 80,519
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Current Rating :
- -3A
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2006
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 2V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 200MHz
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- PNP
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 82
- Emitter Base Voltage (VEBO) :
- -6V
- Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Contact Plating :
- Copper, Tin
- VCEsat-Max :
- 0.35 V
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Base Part Number :
- 2SA1797
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 200MHz
- Number of Pins :
- 4
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- TIN COPPER
- JESD-609 Code :
- e2
- Current - Collector (Ic) (Max) :
- 2A
- Voltage - Rated DC :
- -50V
- Number of Terminations :
- 3
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Datasheets
- 2SA1797T100P
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1797T100P Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SA1797T100P Features
the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz
2SA1797T100P Applications
There are a lot of ROHM Semiconductor
2SA1797T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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