2SA1668

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

20MHz

Voltage - Collector Emitter Breakdown (Max) :

200 V

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Product Status :

Active

Mounting :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

1V @ 70mA, 700mA

Supplier Device Package :

TO-220F

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 700mA 10V

Power - Max :

25W

Mount :

Through Hole

Max Collector Current :

2A

Collector Emitter Breakdown Voltage :

200V

Package Type :

TO-220F

Transistor Type :

PNP

Number of Elements :

1

Factory Lead Time :

12 Weeks

Package :

Bulk

Collector-Emitter Voltage :

200(V)

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

1V

Transistor Application :

AMPLIFIER

Configuration :

Single

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Frequency :

20(MHz)

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

Packaging :

Bulk

Category :

Bipolar Power

Pbfree Code :

yes

Collector-Base Voltage :

200(V)

Published :

2007

DC Current Gain :

@10V

Current - Collector (Ic) (Max) :

2 A

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

ECCN Code :

EAR99

Rad Hardened :

No

Transistor Polarity :

PNP

Frequency - Transition :

20MHz

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

10μA ICBO

Max Power Dissipation :

25W

Emitter-Base Voltage :

6(V)

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Current (DC) :

2(A)

Transistor Element Material :

SILICON

Power Dissipation :

25(W)

RoHS Status :

RoHS Compliant

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Series :

-

Output Power :

Not Required(W)