2SA1552S-E
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- Mfr.Part #
- 2SA1552S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TP
- Stock
- 31,988
- In Stock ：
- 31,988
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -6V
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- -200mV
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- JESD-609 Code :
- e6
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- -180V
- hFE Min :
- 140
- Transistor Type :
- PNP
- Pin Count :
- 3
- Base Part Number :
- 2SA1552
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Element Configuration :
- Single
- Surface Mount :
- No
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 120MHz
- Current - Collector (Ic) (Max) :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- 2SA1552S-E
PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SA1552S-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.A maximum collector current of 1.5A volts can be achieved.
2SA1552S-E Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
2SA1552S-E Applications
There are a lot of ON Semiconductor
2SA1552S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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