2SA1419T-TD-E
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- Mfr.Part #
- 2SA1419T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A PCP
- Stock
- 30,034
- In Stock ：
- 30,034
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Terminal Form :
- Flat
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 120MHz
- JESD-609 Code :
- e6
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 1.5A
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 500mV
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Transition Frequency :
- 120MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 160V
- Base Part Number :
- 2SA1419
- Published :
- 2012
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power - Max :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 180V
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Datasheets
- 2SA1419T-TD-E
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1419T-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
2SA1419T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1419T-TD-E Applications
There are a lot of ON Semiconductor
2SA1419T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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