2SA1419S-TD-E
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- Mfr.Part #
- 2SA1419S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A PCP
- Stock
- 6,363
- In Stock ：
- 6,363
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Base Part Number :
- 2SA1419
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Surface Mount :
- yes
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 160V
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -200mV
- Collector Base Voltage (VCBO) :
- 180V
- Element Configuration :
- Single
- Transition Frequency :
- 120MHz
- Gain Bandwidth Product :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Flat
- Length :
- 4.5mm
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Width :
- 2.5mm
- Height :
- 1.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Max Collector Current :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 160V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2012
- Power Dissipation :
- 500mW
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 120MHz
- Max Breakdown Voltage :
- 160V
- Transistor Type :
- PNP
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e6
- Datasheets
- 2SA1419S-TD-E
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1419S-TD-E Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1.5A volts is possible.
2SA1419S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1419S-TD-E Applications
There are a lot of ON Semiconductor
2SA1419S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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