2SA1416S-TD-E
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- Mfr.Part #
- 2SA1416S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 434
- In Stock ：
- 434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 500mW
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-243AA
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Emitter Base Voltage (VEBO) :
- -6V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Height :
- 1.5mm
- Width :
- 2.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- hFE Min :
- 140
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -200mV
- Max Breakdown Voltage :
- 100V
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Length :
- 4.5mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Published :
- 2012
- JESD-609 Code :
- e6
- Transition Frequency :
- 120MHz
- Case Connection :
- COLLECTOR
- Terminal Form :
- Flat
- Max Frequency :
- 1MHz
- Collector Base Voltage (VCBO) :
- -120V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 120MHz
- Datasheets
- 2SA1416S-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416S-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
2SA1416S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1416S-TD-E Applications
There are a lot of ON Semiconductor
2SA1416S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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