2SA1020G
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- Mfr.Part #
- 2SA1020G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92
- Stock
- 24,702
- In Stock ：
- 24,702
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 2A
- Current Rating :
- -2A
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- -50V
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- hFE Min :
- 70
- JESD-30 Code :
- O-PBCY-T3
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Max Power Dissipation :
- 900mW
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 500mV
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Base Part Number :
- 2SA1020
- ECCN Code :
- EAR99
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.95
- Mounting Type :
- Through Hole
- Datasheets
- 2SA1020G
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA1020G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SA1020G Features
the DC current gain for this device is 70 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SA1020G Applications
There are a lot of ON Semiconductor
2SA1020G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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