2PA1576S,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

6V

Max Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Frequency :

100MHz

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

4 Weeks

Transition Frequency :

100MHz

Number of Elements :

1

Number of Pins :

70

Gain Bandwidth Product :

100MHz

Series :

Automotive, AEC-Q101

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 1mA 6V

Mounting Type :

Surface Mount

VCEsat-Max :

0.5 V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Collector-Base Capacitance-Max :

3.5pF

Number of Terminations :

3

Base Part Number :

2PA1576

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

Transistor Type :

PNP

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

Terminal Position :

Dual

Max Breakdown Voltage :

50V

Power Dissipation :

200mW

Peak Reflow Temperature (Cel) :

260

Published :

2009

Max Collector Current :

150mA