2PA1576Q,115
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- Mfr.Part #
- 2PA1576Q,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA 2PA1576Q - SMALL SIGNAL
- Stock
- 28,819
- In Stock ：
- 28,819
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity :
- PNP
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Min Operating Temperature :
- -65°C
- Series :
- Automotive, AEC-Q101
- Max Operating Temperature :
- 150°C
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 6V
- Power - Max :
- 200mW
- Frequency - Transition :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- SC-70
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Base Part Number :
- 2PA1576
- Published :
- 2009
- Current - Collector (Ic) (Max) :
- 150mA
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 150mA
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Datasheets
- 2PA1576Q,115
PNP 150°C TJ 100nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PA1576Q,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.Supplier package SC-70 contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 150mA volts can be achieved.
2PA1576Q,115 Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SC-70
2PA1576Q,115 Applications
There are a lot of Nexperia USA Inc.
2PA1576Q,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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