2N7227

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Through Hole

DS Breakdown Voltage-Min :

400V

Rds On (Max) @ Id, Vgs :

315m Ω @ 9A, 10V

Terminal Form :

PIN/PEG

Power Dissipation-Max :

4W Ta 150W Tc

Contact Plating :

Lead, Tin

Qualification Status :

Qualified

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

56A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

14A

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Number of Terminations :

3

Transistor Element Material :

SILICON

Reference Standard :

MIL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

FET Type :

N-Channel

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drain to Source Voltage (Vdss) :

400V

Avalanche Energy Rating (Eas) :

700 mJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pin Count :

3

JESD-609 Code :

e0

Package / Case :

TO-254-3, TO-254AA (Straight Leads)