2N6798

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Wire

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Number of Elements :

1

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200V

Vgs (Max) :

±20V

Mount :

Through Hole

JESD-609 Code :

e0

Gate Charge (Qg) (Max) @ Vgs :

5.29nC @ 10V

Published :

1997

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Package / Case :

TO-205AF Metal Can

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

O-MBCY-W3

Continuous Drain Current (ID) :

5.5A

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.21.00.95

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

800mW Ta 25W Tc

Drain-source On Resistance-Max :

0.42Ohm