2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

8A

Power Dissipation-Max :

800mW Ta 25W Tc

HTS Code :

8541.21.00.95

Terminal Position :

BOTTOM

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

6.34nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Package / Case :

TO-205AF Metal Can

Number of Terminations :

3

Published :

1997

Pin Count :

2

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Number of Elements :

1

Terminal Form :

Wire

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

8A

Vgs(th) (Max) @ Id :

4V @ 250mA

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

JESD-30 Code :

O-MBCY-W3

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.195Ohm

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

FET Type :

N-Channel