2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation-Max :

800mW Ta 25W Tc

Package / Case :

TO-205AF Metal Can

Pin Count :

2

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.195Ohm

Number of Terminations :

3

FET Type :

N-Channel

Packaging :

Bulk

Case Connection :

DRAIN

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Wire

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250mA

Mount :

Through Hole

Published :

1997

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Terminal Position :

BOTTOM

JESD-30 Code :

O-MBCY-W3

Continuous Drain Current (ID) :

8A

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

6.34nC @ 10V

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Number of Elements :

1