2N6792TX

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Surface Mount :

No

JEDEC-95 Code :

TO-205AF

Vgs(th) (Max) @ Id :

4V @ 1mA

DS Breakdown Voltage-Min :

400 V

Mounting Type :

Through Hole

Supplier Device Package :

TO-205AF (TO-39)

Package / Case :

TO-205AF Metal Can

Drain-source On Resistance-Max :

1.8 Ω

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

10 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

-

Transistor Application :

SWITCHING

Package :

Bulk

Reference Standard :

MILITARY STANDARD (USA)

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation (Max) :

20W (Tc)

Package Shape :

Round

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

400 V

Vgs (Max) :

±20V

Manufacturer :

Rochester Electronics LLC

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Terminals :

3

Transistor Element Material :

SILICON

RoHS :

Non-Compliant

Terminal Form :

Wire

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 1.25A, 10V

Additional Feature :

RADIATION HARDENED

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

JESD-30 Code :

O-MBCY-W3

Qualification Status :

COMMERCIAL

Terminal Position :

BOTTOM