2N6790

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-205AF Metal Can

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max :

800mW Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Wire

Packaging :

Bulk

JESD-30 Code :

O-MBCY-W3

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

14A

Operating Mode :

ENHANCEMENT MODE

Published :

1997

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.85Ohm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.25A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

3.5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Terminal Finish :

Tin/Lead (Sn/Pb)