2N6788U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

SOURCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

15

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Published :

1997

Mount :

Surface Mount

Continuous Drain Current (ID) :

4.5A

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

18A

Rise Time :

70ns

Drain-source On Resistance-Max :

0.35Ohm

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Power Dissipation-Max :

800mW Tc

Terminal Form :

NO LEAD

Terminal Position :

QUAD

Package / Case :

18-CLCC

Rds On (Max) @ Id, Vgs :

300m Ω @ 3.5A, 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

18/15

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-CQCC-N15

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V