2N6788

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

70ns

Terminal Position :

QUAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Published :

1997

DS Breakdown Voltage-Min :

100V

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

4.5A

Mount :

Surface Mount

Case Connection :

SOURCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

15

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

18A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Package / Case :

18-CLCC

Number of Elements :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

300m Ω @ 3.5A, 10V

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-CQCC-N15

Vgs (Max) :

±20V

Power Dissipation-Max :

800mW Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.35Ohm

Pin Count :

18/15