2N6782U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

800mW Ta 15W Tc

Pin Count :

18

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.5A

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Package / Case :

18-CLCC

JESD-30 Code :

R-CQCC-N15

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Terminal Finish :

Gold Over Nickel

Drain-source On Resistance-Max :

0.61Ohm

Terminal Position :

QUAD

Number of Terminations :

15

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.25A, 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

JESD-609 Code :

e4

Radiation Hardening :

No

Case Connection :

SOURCE

Packaging :

Bulk