2N6770

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

12A

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Through Hole

Additional Feature :

High Reliability

Number of Terminations :

2

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

4W Ta 150W Tc

Qualification Status :

Not Qualified

Package / Case :

TO-204AE

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

HTS Code :

8541.29.00.95

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.5Ohm

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

TIN LEAD OVER NICKEL

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

No

Rise Time :

190ns

JESD-30 Code :

O-MBFM-P2

Pin Count :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pulsed Drain Current-Max (IDM) :

48A

Terminal Form :

PIN/PEG

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

3