2N6770

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

12A

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

O-MBFM-P2

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Qualification Status :

Not Qualified

Pbfree Code :

No

Number of Elements :

1

Published :

1997

JESD-609 Code :

e0

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Mount :

Through Hole

Package / Case :

TO-204AE

Pin Count :

2

Rise Time :

190ns

Reach Compliance Code :

Unknown

Terminal Form :

PIN/PEG

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Additional Feature :

High Reliability

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.5Ohm

Vgs (Max) :

±20V

Power Dissipation-Max :

4W Ta 150W Tc

Terminal Finish :

TIN LEAD OVER NICKEL

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

48A

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Number of Pins :

3