2N6768T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Power Dissipation-Max :

4W Ta 150W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Published :

1997

Rds On (Max) @ Id, Vgs :

400m Ω @ 14A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

400V

Drain-source On Resistance-Max :

0.3Ohm

Terminal Form :

PIN/PEG

Number of Elements :

1

Case Connection :

Isolated

Vgs (Max) :

±20V

Mount :

Through Hole

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Number of Terminations :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

14A

DS Breakdown Voltage-Min :

400V

Pin Count :

3

JESD-30 Code :

S-XSFM-P3

Qualification Status :

Not Qualified

Terminal Position :

Single