2N6768T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Pin Count :

3

Mount :

Through Hole

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

S-XSFM-P3

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Continuous Drain Current (ID) :

14A

Power Dissipation-Max :

4W Ta 150W Tc

Rds On (Max) @ Id, Vgs :

400m Ω @ 14A, 10V

Drain-source On Resistance-Max :

0.3Ohm

Transistor Element Material :

SILICON

Terminal Form :

PIN/PEG

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Drain to Source Voltage (Vdss) :

400V