2N6768

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

400V

Continuous Drain Current (ID) :

14A

Drain-source On Resistance-Max :

0.4Ohm

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Terminal Position :

BOTTOM

Additional Feature :

High Reliability

FET Type :

N-Channel

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

400V

Pulsed Drain Current-Max (IDM) :

56A

JESD-30 Code :

O-MBFM-P2

Terminal Form :

PIN/PEG

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-204AE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Terminal Finish :

TIN LEAD OVER NICKEL

Packaging :

Bulk

Published :

1997

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

400m Ω @ 14A, 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

4W Ta 150W Tc

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE