2N6766

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Rise Time :

190ns

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

30A

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Packaging :

Bulk

Terminal Finish :

TIN LEAD OVER NICKEL

Qualification Status :

Not Qualified

Pbfree Code :

No

ECCN Code :

EAR99

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Drain-source On Resistance-Max :

0.065Ohm

Number of Pins :

3

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max :

4W Ta 150W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-204AE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

Non-RoHS Compliant

Terminal Form :

PIN/PEG

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

O-MBFM-P2

Mount :

Through Hole

Pin Count :

2

Reach Compliance Code :

Unknown

Terminal Position :

BOTTOM

Case Connection :

DRAIN