2N6760

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

40ns

Power Dissipation-Max :

4W Ta 75W Tc

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

JESD-30 Code :

O-MBFM-P2

Continuous Drain Current (ID) :

5.5A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

400V

Mounting Type :

Through Hole

Package / Case :

TO-204AA, TO-3

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Vgs (Max) :

±20V

Packaging :

Bulk

Published :

1997

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

400V

FET Type :

N-Channel

Terminal Form :

PIN/PEG

Pin Count :

2

Pulsed Drain Current-Max (IDM) :

22A

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.22 Ω @ 5.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Mount :

Through Hole

Additional Feature :

High Reliability

Number of Terminations :

2