2N6756

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

4W Ta 75W Tc

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Pin Count :

2

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Bulk

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

80ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

2

Number of Elements :

1

Package / Case :

TO-204AA, TO-3

Drain-source On Resistance-Max :

0.21Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

JESD-30 Code :

O-MBFM-P2

Terminal Position :

BOTTOM

Terminal Form :

PIN/PEG

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Continuous Drain Current (ID) :

14A

DS Breakdown Voltage-Min :

100V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

210m Ω @ 14A, 10V

Published :

1997

Qualification Status :

Not Qualified