2N6756

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.21Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Mount :

Through Hole

DS Breakdown Voltage-Min :

100V

Published :

1997

JESD-30 Code :

O-MBFM-P2

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

14A

Rds On (Max) @ Id, Vgs :

210m Ω @ 14A, 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Package / Case :

TO-204AA, TO-3

Reach Compliance Code :

Unknown

Power Dissipation-Max :

4W Ta 75W Tc

Pin Count :

2

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Rise Time :

80ns

Terminal Form :

PIN/PEG

Number of Terminations :

2