2N5884G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Current Rating :

-25A

Mounting Type :

Through Hole

Length :

39.37mm

Power Dissipation :

200W

Number of Pins :

2

Vce Saturation (Max) @ Ib, Ic :

4V @ 6.25A, 25A

Collector Emitter Saturation Voltage :

1V

Pbfree Code :

yes

Package / Case :

TO-204AA, TO-3

Collector Emitter Breakdown Voltage :

80V

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Max Power Dissipation :

200W

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Transistor Element Material :

SILICON

Terminal Form :

PIN/PEG

Collector Base Voltage (VCBO) :

80V

Height :

26.67mm

RoHS Status :

ROHS3 Compliant

Pin Count :

2

Current - Collector Cutoff (Max) :

2mA

Width :

8.509mm

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

80V

hFE Min :

20

REACH SVHC :

No SVHC

Surface Mount :

No

Transition Frequency :

4MHz

Operating Temperature :

-65°C~200°C TJ

Gain Bandwidth Product :

4MHz

Weight :

4.535924g

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10A 4V

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Base Part Number :

2N5884

Element Configuration :

Single

Terminal Position :

BOTTOM

Frequency :

4MHz

Packaging :

Tray

Max Collector Current :

25A

Transistor Type :

PNP

Number of Terminations :

2

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-80V