2N5195G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Length :

7.74mm

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Max Collector Current :

4A

Frequency :

2MHz

Base Part Number :

2N5195

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Pbfree Code :

yes

Power Dissipation :

40W

Width :

2.66mm

Collector Base Voltage (VCBO) :

80V

Height :

11.04mm

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Operating Temperature :

-65°C~150°C TJ

Weight :

4.535924g

Collector Emitter Voltage (VCEO) :

80V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

80V

Gain Bandwidth Product :

2MHz

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

2MHz

Pin Count :

3

Halogen Free :

Halogen Free

Factory Lead Time :

2 Weeks

Package / Case :

TO-225AA, TO-126-3

Number of Terminations :

3

Collector Emitter Saturation Voltage :

1.4V

Number of Pins :

3

Published :

2005

Surface Mount :

No

JESD-609 Code :

e3

Current Rating :

-4A

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1.5A 2V

Current - Collector Cutoff (Max) :

1mA

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Voltage - Rated DC :

-80V

Element Configuration :

Single

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

hFE Min :

20

Number of Elements :

1

Packaging :

Bulk

Max Power Dissipation :

40W